Keeping great promises for reduced energy usage and high conversion efficiencies, lighting fixtures with solid-state light sources have the possible to revolutionise the lighting industry. Additional improvements in light-emitting efficiency at high currents, with excellent color making at low expense would considerably speed up the widespread uptake of the technology. A new project is investigating the materials for these improved lighting products by developing new large-area semi-polar templates utilizing sapphire and silicon substrates. These semipolar templates help reduce the inbuilt electric fields in LEDs which affect their color security and effectiveness and supply a big area, low cost platform for the growth of the LED levels. The task is additionally making use of the indium aluminium gallium nitride (InAlGaN) material for the light-emitting layers, focusing on blue and yellow emission. A major challenge is patterning of the wafer to produce and coalesce semi-polar planes on the structured sapphire substrate. To this end, experts are assessing the impact of substrate fine orientation and growth parameters through X-ray measurements, luminescence and atomic-scale imaging. Metalorganic and hydride vapour phase epitaxy are used to develop levels on the substrates. The active light-emitting material comprises of quantum wells that have actually large optical efficiency and excellent color purity. Project partners used the HVPE technique to overgrow GaN on top of a GaN layer grown by MOVPE that had been at first prepared on pre-structured sapphire. InGaN layers had been then grown on semi-polar GaN templates with various growth conditions. Semi-polar InGaN structures with different thicknesses had been optimised, reaching large transformation light-emitting efficiencies in the blue and yellow spectra. A move from growing products on semi-polar substrates is assisting to overcome issues related to decrease in LED light-emitting efficiency. Changing present lighting technologies with solid-state lighting based on InGaN LEDs should enable a decrease in electrical energy by up to 5 %.